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深圳市群川盛达电子有限公司
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BTA100 TO-3PS.
IT(RMS) RMS on-state current 100A
VDRM Repetitive peak off-state voltage 600V/800V/1200V/1600V/1800V
VRRM Repetitive peak reverse voltage 600V/800V/1200V/1600V/1800V
TJ Operating junction temperature range -40℃~125℃
Tstg Storage junction temperature range -40℃~150℃
VDSM Non repetitive surge peak Off-state voltage VDRM+100V
VRSM Non repetitive peak reverse voltage VRRM+100V
ITSM Non repetitive surge peak on-state current(tp=20ms) 1100A
I2t I2t value for fusing (tp=10ms) 5500A2S
dI/dt Critical rate of rise of on-state current(IG =2xIGT) 100A/us
IGM Peak gate current 8A
PG(AV) Average gate power dissipation 2W
PGM Peak gate power 10W
IT(RMS) RMS on-state current 100A
VDRM Repetitive peak off-state voltage 600V/800V/1200V/1600V/1800V
VRRM Repetitive peak reverse voltage 600V/800V/1200V/1600V/1800V
TJ Operating junction temperature range -40℃~125℃
Tstg Storage junction temperature range -40℃~150℃
VDSM Non repetitive surge peak Off-state voltage VDRM+100V
VRSM Non repetitive peak reverse voltage VRRM+100V
ITSM Non repetitive surge peak on-state current(tp=20ms) 1100A
I2t I2t value for fusing (tp=10ms) 5500A2S
dI/dt Critical rate of rise of on-state current(IG =2xIGT) 100A/us
IGM Peak gate current 8A
PG(AV) Average gate power dissipation 2W
PGM Peak gate power 10W